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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW133/A DESCRIPTION *High Switching Speed *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V (Min)-BUW133 500V (Min)-BUW133A APPLICATIONS *Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BUW133 BUW133A BUW133 BUW133A VEBO IC ICM IB B MAX 850 UNIT VCES Collector- Emitter Voltage(VBE= 0) V 1000 450 V 500 6 15 20 10 15 135 150 -65~150 V A A A A W VCEO Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.93 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BUW133 IC= 0.1A ; IB= 0; L= 10mH BUW133A BUW133 BUW133A BUW133 BUW133A BUW133 BUW133A ICEV IEBO hFE COB Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance IC= 5A; IB= 0.7A B BUW133/A CONDITIONS MIN 450 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 500 2.5 V 1.0 3.0 V 1.5 1.5 V 1.5 0.25 1.5 1 5 400 pF mA mA VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1.3A IC= 10A; IB= 2A IC= 10A; IB= 1.3A IC= 10A; IB= 2A VCE=VCESMmax;VBE=-1.5V VCE=VCESMmax;VBE=-1.5V;TJ=100 VEB= 6V; IC= 0 IC= 15A ; VCE= 5V IE= 0 ; VCB= 10V; ftest= 1kHz VBE(sat) Base-Emitter Saturation Voltage Switching Times , Resistive Load ton tstg tf Turn-On Time Storage Time Fall Time IC= 10A ;IB1= 1.3A;IB2= -2.6A 0.4 1.3 0.15 s s s isc Websitewww.iscsemi.cn |
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